蓮沼 隆(ハスヌマ リユウ)
- 論文
- Selective growth of monoatomic Cu rows at step edges on Si(111) substrates in ultralow-dissolved-oxygen water
Tokuda N; Nishizawa M; Miki K; Yamasaki S; Hasunuma R; Ya...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS/44(16-19)/pp.0-0, 2005-01 - Selective growth of Ag nanowires on Si(111) surfaces by electroless deposition
Tokuda N; Sasaki N; Watanabe H; Miki K; Yamasaki S; Hasun...
JOURNAL OF PHYSICAL CHEMISTRY B/109(26)/pp.12655-12657, 2005-07 - Utilization of Si atomic steps for Cu nanowire fabrication
Hasunuma R; Yada T; Okamoto J; Hojo D; Tokuda N; Yamabe K
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS/6(6)/pp.667-670, 2005-09 - Study of interactions of Hf and SiO2 film for high-k materials
Chiu Te-Wei; Tanabe Masaaki; Uedono Akira; Hasunuma Ryu; ...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/45(8A)/pp.6253-6255, 2006-08 - シリコン酸化膜フェンス効果を利用した原子ステップの形状・速度制御
鎌田 勝也; 尾崎 亮太; 矢田 隆伸; 蓮沼 隆; 山部 紀久夫
表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan/30(8)/pp.422-426, 2009-08 - Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
Tamura Chihiro; Hayashi Tomohiro; Kikuchi Yuuki; Ohmori ...
JAPANESE JOURNAL OF APPLIED PHYSICS/48(5:Part 2 Sp. Iss. SI)/pp.0-0, 2009-05 - Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
Sometani Mitsuru; Hasunuma Ryu; Ogino Masaaki; Kuribayash...
Jpn J Appl Phys/48(5)/pp.05DB03-05DB03-4, 2009-05 - Roughness Increase on Surface and Interface of SiO2 Grown on Atomically Flat Si(111) Terrace
Ohsawa Keichiro; Hayashi Yusuke; Hasunuma Ryu; Yamabe Kikuo
Jpn J Appl Phys/48(5)/pp.05DB02-05DB02-3, 2009-05 - Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
Chen Jun; Sekiguchi Takashi; Fukata Naoki; Takase Masami...
Jpn J Appl Phys/48(4)/pp.04C005-04C005-4, 2009-04 - Degradation of Atomic Surface Flatness of SiO2 Thermally Grown on a Si Terrace
Yamabe K.; Ohsawa K.; Hayashi Y.; Hasunuma R.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY/156(12)/pp.0-0, 2009-01 - Long TDDB Lifetime of SiO2 Film by Controlling Degradation Rate and SiO2/Si Microroughness
Yoshiro Kabe; Junichi Kitagawa; Yoshihiro Hirota; 2Shinku...
Electrochemical Society, transaction/25(6)/p.371-378, 2009-01 - Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current
Chen Jun; Sekiguchi Takashi; Fukata Naoki; Takase Masami...
APPLIED PHYSICS LETTERS/92(26)/pp.0-0, 2008-06 - Comprehensive analysis of positive and negative bias temperature instabilities in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1 nm
Sato Motoyuki; Yamabe Kikuo; Shiraishi Kenji; Miyazaki S...
JAPANESE JOURNAL OF APPLIED PHYSICS/47(4:Part 2)/pp.2354-2359, 2008-04 - Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
SATO Motoyuki; YAMABE Kikuo; SHIRAISHI Kenji; MIYAZAKI S...
Extended abstracts of the ... Conference on Solid State Devices and Materials/2007(0)/pp.246-247, 2007-09 - Homogeneity improvements in the dielectric characteristics of HfSiON films by nitridation
Naito Tatsuya; Tamura Chihiro; Inumiya Seiji; Hasunuma R...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(5B)/pp.3197-3201, 2007-05 - Guiding principle of energy level controllability of silicon dangling bonds in HfSiON
Umezawa Naoto; Shiraishi Kenji; Miyazaki Seiichi; Uedono ...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/46(4B)/pp.1891-1894, 2007-04 - Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
Tatsuya Naito; Chihiro Tamura; Seiji Inumiya; Ryu Hasunu...
Japanese Journal of Applied Physics/(46)/p.3197-3201, 2007-01 - Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique
Takashi Sekiguchi; J. Chen; Masami Takase; Naoki Fukata; ...
Solid State Phenomena/131-133/p.449-454, 2007-01 - Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams
Akira Uedono; Ryu Hasunuma; Kenji Shiraishi; Kikuo Yamab...
Electrochemical Society, transaction/11(4)/p.81-90, 2007-01 - 原子的に平坦化されたSi(111)表面へのCuナノ細線の形成と原子間力顕微鏡およびフーリエ変換赤外分光法による評価
徳田 規夫; 西澤 正泰; 三木 一司; 山崎 聡; 蓮沼 隆; 山部 紀久夫
日本赤外線学会誌 = Journal of the Japan Society of Infraed Science and Technolog/15(1)/pp.78-83, 2006-02 - Observation of Leakage Sites in a Hafnium Silicon Oxynitride Gate Dielectric of a Metal-oxide-semiconductor Field-effect Transistor Device by Electron-beam-induced Current
Jun Chen; Takashi Sekiguchi; Noki Fukata; M. Takase; ...
Applied Physics Letter/(86)/p.222104, 2006-01 - Asymmetric Distribution of Change Trap in HfO2-based High-k Gate Dielectrics
Keiichi Higuchi; Tatsuya Naito; Akira Uedono; Kenji Shir...
Electrochemical Society, transaction/1(5)/p.777, 2006-01 - Utilization of Si Atomic Steps for Cu Nanowire Fabrication
Ryu Hasunuma; Takanobu Yada; Junichi Okamoto; Daisuke Ho...
Science and Technology of Advanced Materials/(6)/p.667-670, 2005-01 - Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
HASUNUMA Ryu; OKAMOTO Junichi; TOKUDA Norio; YAMABE Kikuo
Japanese journal of applied physics. Pt. 1, Regular papers & short notes/43(11)/pp.7861-7865, 2004-11 - Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
GOTO Masakazu; HIGUCHI Keiichi; TORII Kazuyoshi; HASUNUMA...
Japanese journal of applied physics. Pt. 1, Regular papers & short notes/43(11)/pp.7826-7830, 2004-11 - さらに表示...
- Selective growth of monoatomic Cu rows at step edges on Si(111) substrates in ultralow-dissolved-oxygen water