村上 浩一(ムラカミ コウイチ)
- 論文
- Time-Resolved X-Ray Monitoring of Laser Ablation of and Plasma Formation from Si
H.C. Gerritsen; H. van Brug; F. Bijkerk; K. Murakami; M.J...
J. Appl. Phys./60/p.3438-3443, 1986 - Time-Resolved X-Ray Absorption Study of Amorphous Si during Pulsed Laser Irradiation
H. van Brug; K. Murakami; F. Bijkerk; M.J. van der Wiel
J. Appl. Phys./60/p.1774-1783, 1986 - Atomic Migration and Surface Evaporation of Hg in Hg1-x Cdx Te Crystals Observed by 40 MeV- O5+ Ion Backscattering Method
K. Takita T. Ipposhi K. Murakami K. Masuda H. Kudo a...
J. Appl. Phys/59/p.1500-1503, 1986 - Hg Content of Anodic Oxide Films on Hg1-x Cdx Te after Heat Treatment as Measured by 40 MeV- O5+ Ion Backscattering
K. Takita T. Ipposhi K. Murakami K. Masuda H. Kudo a...
Appl.Phys. Lett./48/p.852-854, 1986 - N-concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon
H. Itoh; K. Murakami; K. Takita; K. Masuda
Materials Science Forum/10-12/p.899-904, 1986 - Time-Resolved X-Ray Absorption Measurements on Pulsed Laser Irradiated Thin Silicon Foils and Si Plasmas
H. van Brug; H.C. Gerritsen; K. Murakami; M.J. van der Wiel
J. de Physique, Colloque/C8/p.193-198, 1986 - Ion-Induced Auger Electrons Emitted from MgO and GaP under Shadowing Conditions
H. Kudo; K. Shima; K. Takita; K. Masuda; K. Murakami; H. ...
Jpn. J. Appl. Phys./25/p.1751-1755, 1986 - Thermal Stability of Hg1-x Cdx Te Crystals Covered with the Anod Oxide Films
K. Takita; T. Ipposhi; K. Murakami; K. Masuda; H. Kudo; S...
Jpn. J. Appl. Phys./25/p.1862-1864, 1986 - Time-Resolved X-Ray Absorption Spectroscopy on Si during Pulsed-Laser Irradiation
K. Murakami; H. van Brug; R. van der Pol; H.C. Gerritsen...
Proc. 18th Intern. Conf. on Physics of Semiconductors (World Scientific,1987)/p.1065-1068, 1987 - パルスレーザー照射による固体Siの高速相変化
村上浩一
固体物理/22/p.556-564, 1987 - Explosive Crystallization starting from an Amorphous-Silicon Surface Region during Long-Pulse Laser Irradiation
K. Murakami; O. Eryu; K. Takita; K. Masuda
Phys. Rev. Letters/59/p.2203-2206, 1987 - Charge-State Changes of Substitutional Nitrogen Impurities in Silicon Induced by Additional Impurities and Defects
H. Itoh; K. Murakami; K. Takita; K. Masuda
J. Appl. Phys./61/p.4862-4868, 1987 - Energy Beam Irradiation of High Tc Superconductors Y1 Ba2 Cu3 O 7-y and Ho1 Ba2 Cu3 O7-y
K. Murakami; O. Eryu; K. Takita; K. Masuda
Jpn. J. Appl. Phys./26/p.l1731-1733, 1987 - イオンビ－ム・プロセッシングの基礎過程 －非平衡状態と動的過程のレ－ザ－照射による研究
村上浩一
化学と工業/40/p.274-277, 1987 - Motional Effects of Substitutional Nitrogen in Silicon Introduced by Ion Implantation and Laser Annealing
K. Murakami; H.Kuribayashi; K. Masuda
Proc. 19th Intern. Conf. on Physics of Semiconductors/p.995-998, 1988 - Motional Effects between On-center and Off-center Substitutional Nitrogen in Silicon
K. Murakami; H. Kuribayashi; K. Masuda
Phy. Rev. B/38/p.1589-1592, 1988 - Hg Content and Thermal Stability of Anodic Sulfide Films on Hg1-x Cdx Te investigated by 30-40 MeV O5+ Ion Backscattering
T. Ipposhi; K. Takita; K. Murakami; K. Masuda; H. Kudo; S...
J. Appl. Phys./63/p.132-135, 1988 - Y-Ba-Cu Oxide Films Formed with Pulsed-Laser-Induced Fragments
O. Eryu; K. Murakami; K. Takita; K. Masuda; H. Uwe H. Ku...
Jpn. J. Appl. Phys./27/p.L628-631, 1988 - Energy Spectra of Secondary Electrons Induced by Fast Ions under Channeling Conditions
H. Kudo; K. Shima; S. Seki; K. Takita; K. Masuda; K. Mur...
Phys. Rev. B/38/p.44-49, 1988 - Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon: Determination by Electron Spin Resonance Measurements
K. Murakami; H. Kuribayashi; K. Masuda
Jpn. J. Appl. Phys./27/p.L1414-1416, 1988 - Profile Redistribution of Implanted Zn Impurities in Si due to Explosive Crystallization from Surface Layer
O. Eryu; K. Murakami; K. Takita; K. Masuda
Nuclear Instruments and Methods in Physics Research B/33/p.665-668, 1988 - Dynamics of Laser-Ablated Particles from High Tc Superconductor YBa2Cu3Oy
O. Eryu; K. Murakami; K. Masuda; A. Kasuya; Y. Nishina
Appl. Phys. Lett./(54)/p.2716-2718, 1989 - Solid-Phase Epitaxy of Molecular-Beam Deposited Amorphous GaAs on Si
K. Yoshino; K. Murakami; S. Yokoyama; K. Masuda
Appl. Phys. Lett/54/p.2562-2564, 1989 - Effect of Rapid Solid-Phase Epitaxy of P+ Implanted Amorphous GaAs/Si
K. Yoshino; K. Murakami; K. Masuda
Jpn. J. Appl. Phys./28/p.L734-737, 1989 - Formation of High Tc Superconducting Films by Laser Induced Fragments
O. Eryu; K. Murakami; K. Takita; K. Masuda
Nuclear Instruments and Methods in Physics Research/B39/p.640-643, 1989 - さらに表示...
- Time-Resolved X-Ray Monitoring of Laser Ablation of and Plasma Formation from Si