Sano Nobuyuki
- Articles
- Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study
Shuichi Toriyama; Kazuya Matsuzawa; and Nobuyuki Sano; +佐...
Proceedings of International Conference on Solid State Materials and Devices (SSDM-2008)/p.pp.892-893, 2008-01 - 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes
Tadayoshi Uechi; Takayuki Fukui; and Nobuyuki Sano; +佐野 伸行
Phys. stat. sol.(c)/5/p.102-106, 2008-01 - Electron Transport Simulations Including Full Coulomb Interaction in Si
Takayuki Fukui; Tadayoshi Uechi; and Nobuyuki Sano; +佐野 伸行
Proceedings of International Workshop on Computational Electronics (IWCE-12)/p.102-103, 2007-10 - Scaling Dependence of Electron Transport in Nano-scale Shottky Barrier MOSFETs
Shuichi Toriyama; Nobuyuki Sano
Proceedings of International Workshop on Computational Electronics (IWCE-12)/p.141-142, 2007-10 - Quasi-ballistic electron transport in nanoscale semiconductor structures
佐野 伸行
應用物理/76(10)/pp.1135-1141, 2007-10 - Consistency of Boundary Conditions in Nonequilibrium Green’s Function Simulations
Suguru Sato; Hiroyuki Kusaka; Nobuyuki Sano
Proceedings of International Workshop on Computational Electronics (IWCE-12)/p.205-206, 2007-10 - 3D Monte Carlo Analysis ofpotential Fluctuations under High Electron Concentrations
Tadayoshi Uechi; Takayuki Fukui; Nobuyuki Sano
Proceedings of International Workshop on Computational Electronics (IWCE-12)/p.128-129, 2007-10 - Schottky Barrier MOSFETs as Resonant Tunneling Devices
TORIYAMA Shuichi; SANO Nobuyuki
Extended abstracts of the ... Conference on Solid State Devices and Materials/2007(0)/pp.48-49, 2007-09 - 3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes
Tadayoshi Uechi; Takayuki Fukui; and Nobuyuki Sano; +佐野 伸行
Proceedings of 15-th International Conference on Nonequilibrium Carrier Transport in Semiconductors (HCIS-15)/p.89, 2007-07 - Effects of Gate-Edge Metamorphoses (GEM) on Device Characteristics of Scaled MOSFETs
Tatsuya Yamada; Nobuyuki Sano
Proceedings of 2007 International Semiconductor Device Research Symposium (ISDRS 2007)/p.WP8-01, 2007-01 - Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
KUSAKA Hiroyuki; SANO Nobuyuki
Extended abstracts of the ... Conference on Solid State Devices and Materials/2006(0)/pp.356-357, 2006-09 - Device Simulation of Random Dopant Effects in Ultra- small MOSFETs Based on Advanced Physical Models
Shuichi Toriyama; Daisuke Hagishima; Kazuya Matsuzawa; an...
Proceedings of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2006)/p.145-146, 2006-01 - Hot Electrons Associated with the Long-Range Coulomb Interaction under the High-Density Regime
Tadayoshi Uechi; Nobuyuki Sano
Proceedings of 2006 VLSI-TSA Technology Symposium (2006 VLSI-TSA)/pp.141-142, 2006-01 - Coulomb and phonon scattering processes in metal-oxide-semiconductor inversion layers: Beyond Matthiessen's rule
Ishihara T; Sano N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS/44(4A)/pp.1682-1686, 2005-04 - Kinetic Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices
佐野 伸行
The transactions of the Institute of Electronics, Information and Communication Engineers. C/88(4)/pp.261-269, 2005-04 - Gate Tunneling Current Fluctuations Associated with Random Dopant Effects
Shuichi Toriyama; Kazuya Matsuzawa; and Nobuyuki Sano; +佐...
Proceedings of The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2005)/p.23-26, 2005-01 - (INVITED) Electron Transport and Particle-based Simulations for Nanoscale Semiconductor Devices
Nobuyuki Sano; Hiroyuki Kusaka
Proceedings of 2005 International Meeting for Future of Electron Devices, Kansai (IMFEDK-2005)/p.25-26, 2005-01 - Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers: Beyond Matthiessen's Rule
Takamitsu Ishihara; Nobuyuki Sano
Jpn. J. Appl. Phys/44/p.1682-1686, 2005-01 - Kinetic Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices
Nobuyuki Sano
Electronic Communications in Japan/88/p.1-9, 2005-01 - Kinetic study of quasi-ballistic electron transport in nanoscale semiconductor devices
Sano N
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS/88(11)/pp.1-9, 2005-01 - (INVITED) Electron Transport in Nanoscale Semiconductor Devices: Ballistic vs. Quasiballistic
Nobuyuki Sano
Proceedings of 2005 VLSI-TSA Technology Symposium (VLSI-TSA-2005)/p.58-61, 2005-01 - Kinetics of quasiballistic transport in nanoscale semiconductor structures: Is the ballistic limit attainable at room temperature?
Sano N
PHYSICAL REVIEW LETTERS/93(24)/pp.0-0, 2004-12 - Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature?
Nobuyuki Sano
Phys. Rev. Lett./93/p.246803_1-4, 2004-12 - Probing subpicosecond dynamics using pulsed laser combined scanning tunneling microscopy
Takeuchi O; Aoyama M; Oshima R; Okada Y; Oigawa H; Sano ...
APPLIED PHYSICS LETTERS/85(15)/pp.3268-3270, 2004-10 - Theoretical Study of Quasi-Ballistic Electron Transport from the Viewpoint of the Kinetic Equation
佐野 伸行
Technical report of IEICE. VLD/104(322)/pp.45-50, 2004-09 - more...
- Impacts of Random Dopant Fluctuation on Transient Characteristics in CMOS Inverters: A Device Simulation Study