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Okumura Hironori

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Affiliation
Faculty of Pure and Applied Sciences
Official title
Assistant Professor
URL
Research fields
Electronic materials/Electric materials
Crystal engineering
Thin film/Surface and interfacial physical properties
Research projects
高放射線耐性半導体光検出器の実現のための調査研究2018 -- 2020井村 将隆/平成30年度TIA連携プログラム探索推進事業「かけはし」
窒素極性面AlNの接触抵抗低減と分極効果トランジスタの実現2017-04 -- 2019-03Hironori OKUMURAJSPS/Grant-in-Aid for Scientific Research4,420,000Yen
陽電子消滅による結晶特異構造のキャリア捕獲・散乱ダイナミックスの評価2016-06 -- 2021-03Akira UEDONOJapan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research on Innovative Areas50,700,000Yen
InAlN層におけるデバイスプロセス中に発生した欠陥評価とその電気的特性への影響2015-08 -- 2017-03hironori okumuraJapan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research2,990,000Yen
Career history
2016-04 -- 2018-03MIT EECS visiting researcher
2015-04 -- 2016-03EPFL Physics visiting researcher
2014-04 -- 2015-03NTT Basic research laboratory Post-doc
2012-04 -- 2014-03UCSB Materials Post-doc (JSPS fellowship)
Academic background
2007-04 -- 2012-03Kyoto University Engineering Electrical and Electronics EngineeringCompleted
2003-04 -- 2007-03Kyoto University engineering Electrical and Electronics EngineeringGraduated
Degree
2012-03Ph.D, engineeringKyoto University
Articles
Books
  • Other Research Environment
    奥村 宏典
    The Surface Science Society of Japan, 2016
Conference, etc.
  • Demonstration of beta-(AlGa)2O3(010) metal-semiconductor field-effect transistors with high breakdown voltage over 900 V
    Okumura Hironori; Kato Yuji; Ohshima Takayoshi; Palacios ...
    2018 International Conference on Solid State Devices and Materials/2018-09-09--2018-09-13
  • Nitrogen-face AlN-based field-effect transistors
    Okumura Hironori; Lemettinen Jori; Suihkonen Sami; Palaci...
    Compound Semiconductor Week 2018/2018-05-29--2018-06-01
  • AlN metal-semiconductor field-effect transistors using Si-ion implantation
    Okumura Hironori
    The 2017 MRS Fall Meeting & Exhibit/2017-11-26--2017-12-01
  • AIN metal-semiconductor field-effect transistors using Si-ion implantation
    Okumura Hironori; Suihkonen Sami; Lemettinen Jori; Uedono...
    International Conference on Solid State Devices and Materials (SSDM)/2017-09-19--2017-09-22
  • Electrical Properties of Si-Ion Implanted AlN
    Okumura Hironori; Sami Suihkonen Tomas Palacios
    9th International Conference on Nitride Semiconductors/2017-07
  • Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
    Okumura Hironori; Marco Malinverni Denis Martin Nicolas G...
    2016 Materials Research Societies Fall meeting/2016-12
  • Highly p-type GaN for Advanced Optoelectronic Devices
    Okumura Hironori; Malinverni Marco; Martin Denis; Grandje...
    2016 IEEE Photonics Conference/2016-10
  • Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
    Okumura Hironori; Marco Malinverni Denis Martin Nicolas G...
    19th International Conference on Molecular Beam Epitaxy/2016-09
Teaching
2017-10 -- 2018-02Research in Applied Physics IIIAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics VAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IVAUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IIIAUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics VBUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IIIBUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IVAUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IIIBUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IIAUniversity of Tsukuba.
Other educational activities
2018-07 -- 2018-07大阪大学 電子工学特別講義 非常勤講師大阪大学
2018-04 -- 2020-03応用理工学類クラス担任筑波大学
Talks
  • High-power devices using ultra wide bandgap semiconductors
    Okumura Hironori
    University of California, Santa Barbara, Seminar/2018-03-20--2018-3-20
  • これまでの半導体とこれからの半導体
    奥村 宏典
    ボストン日本人研究者交流会/2018-03-17--2018-03-17
  • 高濃度Mgドーピングによるp型GaN層の接触抵抗の低減
    奥村 宏典
    筑波大学数理物質系 専攻セミナー/2016-04-01--2016-04-01
  • 垂直共振器面発光レーザー応用に向けたGaN層のトンネル接合
    奥村 宏典
    東京大学生産技術研究所 セミナー/2016-03-30--2016-03-30
  • 高濃度 Mg ドーピングを行った p 型 GaN 層の低い接触抵抗
    奥村 宏典
    京都大学大学院工学研究科 セミナー/2016-03-29--2016-03-29
  • P-Type Doping Control of Mg-doped AlGaN for deep-UV LEDs
    Okumura Hironori; Yoshitaka Taniyasu; Hideki Yamamoto
    Aalto University seminer/2015-09-14--2015-09-14
  • New Devices using Wide-Bandgap Semiconductors
    Okumura Hironori
    3rd Meeting of Japanese young scientists in EU/2015-08-29--2015-08-29
  • AlGaN growth using PAMBE and MOVPE
    Okumura Hironori
    EPFL seminar/2015-04-15
University Management
2018-04 -- (current)Tsukuba Research Center for Energy Materials Science
2018-06 -- (current)筑波大学ナノプラットフォーム運営委員
Other activities
2018-04 -- (current)文部科学省 科学技術・学術政策研究所 科学技術動向研究センター 専門調査員

(Last updated: 2018-07-05)