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Okumura Hironori

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Affiliation
Faculty of Pure and Applied Sciences
Official title
Assistant Professor
URL
Email
 
Other affiliation
MIT EECSvisiting researcher
Research fields
Electronic materials/Electric materials
Crystal engineering
Thin film/Surface and interfacial physical properties
Research projects
窒素極性面AlNの接触抵抗低減と分極効果トランジスタの実現2017-04 -- 2019-03Hironori OKUMURAJSPS/Grant-in-Aid for Scientific Research4,420,000Yen
陽電子消滅による結晶特異構造のキャリア捕獲・散乱ダイナミックスの評価2016-06 -- 2021-03Akira UEDONOJapan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research on Innovative Areas50,700,000Yen
InAlN層におけるデバイスプロセス中に発生した欠陥評価とその電気的特性への影響2015-08 -- 2017-03hironori okumuraJapan Society of for the Promotion of Science/Grant-in-Aid for Scientific Research2,990,000Yen
Career history
2016-04 -- 2018-03MIT EECS visiting researcher
2015-04 -- 2016-03EPFL Physics visiting researcher
2014-04 -- 2015-03NTT Basic research laboratory Post-doc
2012-04 -- 2014-03UCSB Materials Post-doc (JSPS fellowship)
Academic background
2007-04 -- 2012-03Kyoto University Engineering Electrical and Electronics EngineeringCompleted
2003-04 -- 2007-03Kyoto University engineering Electrical and Electronics EngineeringGraduated
Degree
2012-03Ph.D, engineeringKyoto University
Articles
Books
  • Other Research Environment
    奥村 宏典
    2016
Conference, etc.
  • Electrical Properties of Si-Ion Implanted AlN
    Okumura Hironori; Sami Suihkonen Tomas Palacios
    9th International Conference on Nitride Semiconductors/2017-07
  • Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
    Okumura Hironori; Marco Malinverni Denis Martin Nicolas G...
    2016 Materials Research Societies Fall meeting/2016-12
  • Highly p-type GaN for Advanced Optoelectronic Devices
    Okumura Hironori; Malinverni Marco; Martin Denis; Grandje...
    2016 IEEE Photonics Conference/2016-10
  • Electrical Properties of Mg-doped GaN with High Acceptor Concentrations
    Okumura Hironori; Marco Malinverni Denis Martin Nicolas G...
    19th International Conference on Molecular Beam Epitaxy/2016-09
Teaching
2017-10 -- 2018-02Research in Applied Physics IIIAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics VAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IVAUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IIIAUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics VBUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IIIBUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IVAUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IIIBUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IIAUniversity of Tsukuba.
Talks
  • 高濃度Mgドーピングによるp型GaN層の接触抵抗の低減
    奥村 宏典
    筑波大学数理物質系 専攻セミナー/2016-04-01--2016-04-01
  • 垂直共振器面発光レーザー応用に向けたGaN層のトンネル接合
    奥村 宏典
    東京大学生産技術研究所 セミナー/2016-03-30--2016-03-30
  • 高濃度 Mg ドーピングを行った p 型 GaN 層の低い接触抵抗
    奥村 宏典
    京都大学大学院工学研究科 セミナー/2016-03-29--2016-03-29
  • P-Type Doping Control of Mg-doped AlGaN for deep-UV LEDs
    Okumura Hironori; Yoshitaka Taniyasu; Hideki Yamamoto
    Aalto University seminer/2015-09-14--2015-09-14
  • New Devices using Wide-Bandgap Semiconductors
    Okumura Hironori
    3rd Meeting of Japanese young scientists in EU/2015-08-29--2015-08-29
  • AlGaN growth using PAMBE and MOVPE
    Okumura Hironori
    EPFL seminar/2015-04-15

(Last updated: 2017-08-04)