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Uedono Akira

Affiliation
Faculty of Pure and Applied Sciences
Official title
Professor
Research projects
陽電子消滅による結晶特異構造のキャリア捕獲・散乱ダイナミックスの評価2016 -- 2020上殿 明良Japan Society for the Promotion of Science/Grant-in-Aid for Scientific Research on Innovative Areas50,700,000Yen
低速陽電子ビームによる絶縁膜/Si界面の遷移層及び歪の研究2007 -- 2010Japan Society of for the Promotion of Science/基盤研究(B)14,560,000Yen
Articles
  • Spatio-time-resolved cathodoluminescence study on high AlN mole fraction AlxGa1-xN structures grown by metalorganic vapor phase epitaxy
    Chichibu Shigefusa F.; Ishikawa Youichi; Furusawa Kentaro...
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016
  • Vacancy-type defects in Mg-implanted GaN probed by a monoenergetic positron beam
    Uedono Akira; Takashima Shinya; Edo Masaharu; Ueno Katsun...
    2016 16th International Workshop on Junction Technology (IWJT)/pp.35-38, 2016
  • Polarity Dependent Radiation Hardness of GaN
    Matsuo Masayuki; Murayama Takayuki; Koike Kazuto; Sasa Sh...
    2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015
  • Vacancies in InxGa1−xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam
    Uedono Akira; Kurihara Kaori; Yoshihara Nakaaki; Nagao Sa...
    APPLIED PHYSICS EXPRESS/8(5)/p.51002, 2015-05
  • Impact of Back Grind Damage on Si Wafer Thinning for 3D Integration
    水島 賢子; 金 永ソク; 中村 友二; 杉江 隆一; 橋本 秀樹; 上...
    Technical report of IEICE. SDM/113(451)/pp.13-18, 2014-02
  • 28pAL-14 Development of an electrostatic acceleration system for the positron probe
    大島 永康; 木村 彰吾; 渡邊 智仁; 上殿 明良; 伊藤 賢志; オ...
    Meeting abstracts of the Physical Society of Japan/69(1)/p.930, 2014-03
  • Development of a method for evaluating samples under humidity controlled air using slow positrons
    大島 永康; Zhou Wei; 伊藤 賢志; Chen Zhe; O'Rourke Brian;...
    Meeting abstracts of the Physical Society of Japan/67(1)/p.989, 2012-03
  • 29aXZB-7 Development of a High Efficiency Pulsing System using Induction Buncher
    金古 岳史; 林崎 規託; 大島 永康; 木野 村淳; O'Rourke Bria...
    Meeting abstracts of the Physical Society of Japan/68(1)/p.1049, 2013-03
  • 29aXZB-8 The status of the new positron beamline at AIST
    オローク ブライアン; 大島 永康; 木野 村淳; 小川 博嗣; 鈴...
    Meeting abstracts of the Physical Society of Japan/68(1)/p.1049, 2013-03
  • Vacancy-type defects in InxGa1-xN grown on GaN templates probed using monoenergetic positron beams
    Uedono Akira; Watanabe Tomohito; Kimura Shogo; Zhang Yang...
    JOURNAL OF APPLIED PHYSICS/114(18), 2013-11
  • An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy in Hf-based High-k Gate Oxides
    N. Umezawa; K. Shiraishi; Y. Akasaka; S. Inumiya; A. Uedo...
    Trans. Material Res. Soc. Jpn./31/p.129-132, 2006-01
  • Extensive Studies for the Effect of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics
    N. Umezawa; K. Shiraishi; H. Watanabe; K. Torii; Y. Akasa...
    ECS Transaction/2(1)/p.63-78, 2006-01
  • The Positron Annihilation in GaAs Containing Defects
    A. Uedono; Y. Iwase; S. Tanigawa
    Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 711-713./p.711-713, 1985-01
  • Study of Grown-in Defects in InP by the Positron Labeling Technique and Variable Energy Positron Beam
    Y. Iwase; A. Uedono; S. Tanigawa; H. Araki
    Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 753-755./p.753-755, 1985-01
  • The Temperature Dependence of a Positron Trapping Effect in Glassy Metals
    A. Uedono; Y. Iwase; S. Tanigawa
    Positron Annihilation, edited by P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore 1985) p. 865-867./p.865-867., 1985-01
  • Defects in Helium Implanted Metals Studied by Monoenergetic Positron Beam
    Y. Iwase; A. Uedono; S. Tanigawa; H. Sakairi
    Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 868-870./p.868-870, 1985-01
  • Precision Experiments on the Divacancy Effect in Dilute Al Alloys
    S. Tanigawa; K. Ito; A. Morisue; A. Uedono; Y. Iwase; S. ...
    Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 886-888./p.886-888., 1985-01
  • Application of the Variable Energy Positron Beam to the Study of Si/SiO2 Interface
    Y. Iwase; A. Uedono; S. Tanigawa
    Positron Annihilation, eds. P.C. Jain, R.M. Singru and K.P. Gopinathan (World Scientific, Singapore, 1985) p. 977-979./p.977-979., 1985-01
  • 同時比較検出による陽電子消滅ドップラー拡がりの精密測定
    岩瀬義倫; 上殿明良; 谷川庄一郎; 鈴木敬愛
    Radioisotopes 34, 195-200 (1985)./34/p.195-200, 1985-01
  • A Study of Agglomeration and Release Processes of Helium Implanted in Nickel by a Variable Energy Positron Beam
    S. Tanigawa; Y. Iwase; A. Uedono; H. Sakairi
    J. Nucl. Mater. 133&134, 463-467 (1985)./133&134/p.463-467, 1985-01
  • Generation of Thermal Muonium in Vacuum
    A.P. Mills; Jr.; J. Imazato; S. Saitoh; A. Uedono; Y. Kaw...
    Phys. Rev. Lett. 56, 1463-1466 (1986)./56/p.1463-1466, 1986-01
  • 単一エネルギー低速陽電子を用いた表面解析装置
    上殿明良; 谷川庄一郎
    Radioisotopes 37, 217-220 (1988)./37/p.217-220, 1988-01
  • 単色陽電子線を用いたイオン注入に伴う格子欠陥分布の検出
    上殿明良; 谷川庄一郎
    Ionics 153, 1-11 (1988)./153/p.1-11, 1988-01
  • Defect Creation Caused by Ion Implantation and Activation Behavior by Rapid Thermal Annealing on Semiconducting Materials
    J.-L. Lee; K.-H. Shin; J.S. Kim; H.M. Park; D.S. Ma; S. T...
    J. Korean Int. of Telematic and Electronics 25, 1447-1457 (1988)./25/p.1447-1457, 1988-01
  • Defect Characterization of Si+-Implanted GaAs by Monoenergetic Positron Beam Technique
    J.-L. Lee; K.-H. Shin; S. Tanigawa; A. Uedono; J.S. Kim; ...
    J. de Phys. Colloque C4, 457-460 (1988)./p.457-460, 1988-01
Books
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011-01
  • Application of positron annihilation technique to front and backend processes for modern LSI devices
    Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
    12TH INTERNATIONAL WORKSHOP ON SLOW POSITRON BEAM TECNIQUES (SLOPOS12), 2011-01
  • Study of high-k gate dielectrics by means of positron annihilation
    Uedono A.; Naito T.; Otsuka T.; Ito K.; Shiraishi K.; Yam...
    Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 10/pp.3599-3604, 2007-01
  • Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
    Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
    PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE/pp.75-77, 2009-01
  • Vacancy-type defects in SrTiO3 probed by a monoenergetic positron beam
    Uedono A; Kiyohara M; Shimoyama K; Matsunaga Y; Yasui N; ...
    POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS/pp.201-203, 2004-01
  • Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
    Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
    FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES/pp.43-48, 2004-01
  • Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE
    Shimizu Y; Kobayashi N; Uedono A; Okada Y
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS/pp.255-258, 2005-01
  • Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications
    Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Akir...
    Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, Vols 1 and 2/pp.811-814, 2006-01
Conference, etc.
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27
  • Point defects in GaN and related group-III nitrides studied by means of positron annihilation
    Uedono Akira; Ishibashi Shoji; Chichibu Shigefusa F.; Aki...
    Conference on Gallium Nitride Materials and Devices VI/2011-01-24--2011-01-27
  • Application of positron annihilation technique to front and backend processes for modern LSI devices
    Uedono A.; Ishibashi S.; Oshima N.; Ohdaira T.; Suzuki R.
    12th International Workshop on Slow Positron Beam Techniques/2010-08-01--2010-08-06
  • Point defects in group-III nitride semiconductors studied by positron annihilation
    Uedono A.; Ishibashi S.; Ohdaira T.; Suzuki R.
    2nd International Symposium on Growth of III Nitrides (ISGN-2)
  • Characterization of Low-k SiOCH Layers in Fine-Pitch Cu-Damascene Interconnects by Monoenergetic Positron Beams
    Uedono A.; Inoue N.; Hayashi Y.; Eguchi K.; Nakamura T.; ...
    IEEE International Interconnect Technology Conference
  • Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application
    Hasunuma Ryu; Tamura Chihiro; Nomura Tsuyoshi; Kikuchi Yu...
    IEEE International Electron Devices Meeting (IEDM 2009)
  • Point defects in thin HfAIO(x) films probed by monoenergetic positron beams
    Uedono A; Mitsuhashi R; Horiuchi A; Torii K; Yamabe K; Ya...
    Symposium on Fundamentals of Novel Oxide/Semiconductor Interfaces held at the 2003 MRS Fall Meeting
  • Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers
    Chichibu SF; Sugiyama M; Nozaka T; Suzuki T; Onuma T; Nak...
    12th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE 12)
  • Characterization of Hf0.3Al0.7Ox fabricated by atomic-layer-deposition technique using monoenergetic positron beams
    Uedono A; Goto M; Higuchi K; Shiraishi K; Yamabe K; Kitaj...
    International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF-4)
  • Defect control in Ga(In)NAs films grown by atomic H assisted R-F-MBE
    Shimizu Y; Kobayashi N; Uedono A; Okada Y
    31st International Symposium on Compound Semiconductors
  • Optimization of growth of GaInNAs dilute nitrides for multi-junction solar cell applications
    Shimizu Yukiko; Miyashita Naoya; Mura Yusuke; Uedono Akir...
    4th World Conference on Photovoltaic Energy Conversion
Teaching
2017-10 -- 2018-02Research in Applied Physics IIIAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics VAUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IVAUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IIIAUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics VBUniversity of Tsukuba.
2017-10 -- 2018-02Laboratory Exercise for Electronics and Quantum Effect Engineering AUniversity of Tsukuba.
2017-10 -- 2018-02Research in Applied Physics IIIBUniversity of Tsukuba.
2017-10 -- 2018-02Material and Device Physics for Nanoscience BUniversity of Tsukuba.
2017-04 -- 2017-08Research in Applied Physics IVAUniversity of Tsukuba.

(Last updated: 2016-06-01)